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Green device available.
Advanced high cell denity trench technology for ultra RDS(ON).
Excellent package for good heat dissipation.
Our advantages:
China's manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. Slkor semiconductor electronic components can fully replace those of major international brands in 99% of applications without the need for testing verification.
Slkor alternative equivalents for Infineon:
| Infineon | Slkor Replacements | ||
| Part Number | Part Number | Product Category | Package |
| IRF640NPBF | IRF640 | MOSFET | TO-220 |
| IRFR5305TRPBF | IRFR5305 | MOSFET | TO-252 |
| TLE4275 | SL4275 | LDO | TO-252 |
| TLE4284 | SL4284 | LDO | TO-252 |
| BCR401 | SL401 | Driver IC | SOT-23 |
Description :
This p-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. it can be used in a wide variety of applications.
Features :
Vs=-60V,l=-30A,RDS(ON)<35m Ω @VGS=-10V
Low gate charge.
Green device available.
Advanced high cell denity trench technology for ultra RDS(ON).
Excellent package for good heat dissipation.
| File Name | Title | Description |
|---|---|---|
| IRFR5305 TO-252.pdf | IRFR5305 TO-252 | - |
| RoHS-1.pdf | RoHS | - |
| REACH.pdf | REACH | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Green device available. Advanced high cell denity trench technology for ultra RDS(ON). Excellent package for good heat dissipation.
100% EAS Guaranteed Green Device Available Super Low Gate Charge
High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation
Improved dv/dt capability High density cell design for ultra low Rdson Good stability and uniformity with high EAS
High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation
Green device available Excellent package for good heat dissipation Advanced high cell denity trench technology for ultra lowRDS(ON)
High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation
Green device available. Advanced high cell denity trench technology for uitra low RDS(ON) Excellent package for good heat dissipation.
