SL2309 P-Channel Power MOSFET SOT-23-3

P-Channel,Vdss:60V,Id:1.6A,Pd:1.5W,RDS(on):140mΩ,Vgs(th):2V,Working Temperature:-55℃~+150℃

High density cell design for ultra low Rdson  
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation

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General Features

● VDS =-60V,ID =-1.6A RDS(ON) <160m? @ VGS=-10V  RDS(ON) <200m? @ VGS=-4.5V  
● High density cell design for ultra low Rdson  
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation

Application
● Load switch  
● PWM application


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Longevity

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