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100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
General Description
The SL12P03Sis the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The SL12P03S meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
Features
● 100% EAS Guaranteed
● Green Device Available
● Super Low Gate Charge
● Excellent CdV/dt effect decline
● Advanced high cell density Trench technology
| File Name | Title | Description |
|---|---|---|
| SL12P03S SOP-8.pdf | SL12P03S SOP-8 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Green device available. Advanced high cell denity trench technology for uitra low RDS(ON) Excellent package for good heat dissipation.
● Trench Power LV MOSFET technology ● High density cell design for Low RDS(ON) ● High Speed switching
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Green device available. ● Advanced high cell denity trench technology for ultra low RDS(ON). ● Excellent package for good heat dissipation.
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
● Trench Power LV MOSFET technology. ● High density cell design for Low RDS(ON). ● High Speed switching
● Trench Power LV MOSFET technology. ● High density cell design for Low RDS(ON). ● High Speed switching
●Trench Power MV MOSFET technology ●Excellent package for heat dissipation ●High density cell design for low RDS(ON)
