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● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Description
The SLP240C03D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
Features
lN-Channel
VDS= 30V,Io =8.5A
RDS(ON) < 21mΩ @ VGS=10V
Rosow< 32mΩ @ VGS=4.5V
lP-Channel
VDS= -30V,lo= -7.0A
RDS(ON)< 45m2 @ VGS=-10V
RDS(ON)< 60mΩ @ VGS=-4.5V
lHigh power and current handing capability
lLead free product is acquired
lSurface mount package
| File Name | Title | Description |
|---|---|---|
| SLP240C03D SOP-8.pdf | SLP240C03D SOP-8 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
100% EAS Guaranteed Green Device Available Super Low Gate Charge
Green device available. Advanced high cell denity trench technology for uitra low RDS(ON) Excellent package for good heat dissipation.
● Trench Power LV MOSFET technology ● High density cell design for Low RDS(ON) ● High Speed switching
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Green device available. ● Advanced high cell denity trench technology for ultra low RDS(ON). ● Excellent package for good heat dissipation.
● Trench Power LV MOSFET technology. ● High density cell design for Low RDS(ON). ● High Speed switching
● Trench Power LV MOSFET technology. ● High density cell design for Low RDS(ON). ● High Speed switching
●Trench Power MV MOSFET technology ●Excellent package for heat dissipation ●High density cell design for low RDS(ON)
