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Green device available.
Advanced high cell denity trench technology for uitra low RDS(ON)
Excellent package for good heat dissipation.
Description
This P-Channel MOSFET uses advanced trench technology and design to provide excellent Rpsjon, with low gate charge. It can be used in a wide variety of applications.
Features
VDS=-60V, ID=-8.5A, RDS(ON)<30m Ω @VGS=-10V
Low gate charge.
Green device available.
Advanced high cell denity trench technology for uitra low RDS(ON)
Excellent package for good heat dissipation.
| File Name | Title | Description |
|---|---|---|
| SL4421 SOP-8.pdf | SL4421 SOP-8 | - |
| RoHS-1.pdf | RoHS | - |
| REACH.pdf | REACH | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
100% EAS Guaranteed Green Device Available Super Low Gate Charge
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