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● Green device available.
● Advanced high cell denity trench technology for ultra low RDS(ON).
● Excellent package for good heat dissipation.
Description：
lThis N+P Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features：
lN-Channel:VDS=40V,ID=-10A,RDS(ON)<22mΩ@VGS=-10V
lP-Channel:VDS=-40V,ID=-8A,RDS(ON)<53mΩ@VGS=-10V
lLow gate charge.
lGreen device available.
lAdvanced high cell denity trench technology for ultra low RDS(ON).
lExcellent package for good heat dissipation.
| File Name | Title | Description |
|---|---|---|
| SLP170C04D SOP-8.pdf | SLP170C04D SOP-8 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
100% EAS Guaranteed Green Device Available Super Low Gate Charge
Green device available. Advanced high cell denity trench technology for uitra low RDS(ON) Excellent package for good heat dissipation.
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