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Green device available
Excellent package for good heat dissipation
Advanced high cell denity trench technology for ultra lowRDS(ON)
Description
●This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
●VDS=-100V,ID=-20A,RDS(ON)<90mΩ@VGS=-10V
●Low gate charge.
●Green device available.
●Advanced high cell denity trench technology for ultra lowRDS(ON).
●Excellent package for good heat dissipation.
| File Name | Title | Description |
|---|---|---|
| IRF9540 TO-220.pdf | IRF9540 TO-220 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
● Ultra Low Gate Charge cause lower driving requirements ● 100%Avalanche Tested ● ROHS compliant
100% Avalanche Tested Fast Switching Improved dv/dt Capability
Ultra fast switching 100% avalanche tested Improved dv/dt capability
High ruggedness Fast switching 100% avalanche tested
Low gate charge(typical19.6nC) Lower Gate Resistance 100% Avalanche Tested
High ruggedness Ultra fast switching 100% avalanche tested
Low gate charge Low Crss (typ 9pF) Fast switching
100%Avalanche Tested Fast Switching Improved dv/dt Capability
