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Improved dv/dt capability
High density cell design for ultra low Rdson
Good stability and uniformity with high EAS
N-Channel Power MOSFET
General Features
● VDS =-60V. ID =11A
RDS(ON)<175 mΩ VGS=-10V
RDS(ON)<210 mΩ@VGS=-4.5V
● Improved dv/dt capability
● High density cell design for ultra low Rdson
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Applications
● Power switching application
● Hard switched and high frequency circuits
● LED Lighting
| File Name | Title | Description |
|---|---|---|
| SL11P06DN1.pdf | SL11P06DN1 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation
Type: P-Channel Vdss: 40V Id: 60A RDS(on)@Vgs,Id: 7.9mΩ@10V,20A Vgs(th)@Id: 1.6V@250uA Pd: 60W
● Advance high cell density Trench technology ● Low RDS(ON) to minimize conductive loss ● Low Gate Charge for fast switching
Type: P-Channel Vdss: -30V Id: -70A RDS(on)@Vgs,Id: 5.1mΩ@-20V,-20A Vgs(th)@Id: 2.5V@-250uA Pd: 90W
Fast switching 100% avalanche tested Improved dv/dt capability
Type: N-channel Vdss:650V Id: 8A RDS(on)@Vgs,Id: 550mΩ@10V,2.5A Vgs(th)@Id: 4.5V@250μA Pd: 69W
Gate Charge (Typical 18.5nC) Improved dv/dt Capability 100% Avalanche Tested
100% EAS Guaranteed Green Device Available Super Low Gate Charge
