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● Advance high cell density Trench technology
● Low RDS(ON) to minimize conductive loss
● Low Gate Charge for fast switching
● General Description
The SL420NPD combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
● Features
■ Advance high cell density Trench technology
■ Low RDS(ON) to minimize conductive loss
■ Low Gate Charge for fast switching
■ Low Thermal resistance
● Application
■ MB/VGA Vcore
■ SMPS 2nd Synchronous Rectifier
■ POL application
■ BLDC Motor driver
| File Name | Title | Description |
|---|---|---|
| SL420NPD-1.pdf | SL420NPD-1 | - |
| SL250N04Q-PDFN56.pdf | SL250N04Q PDFN56 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| REACH.pdf | REACH | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
Support
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant
● Ultra Low Gate Charge cause lower driving requirements ● 100%Avalanche Tested ● ROHS compliant
Fast switching 100% avalanche tested Improved dv/dt capability
100% Avalanche Tested Fast Switching Improved dv/dt Capability
Type: N-channel Vdss:650V Id: 8A RDS(on)@Vgs,Id: 550mΩ@10V,2.5A Vgs(th)@Id: 4.5V@250μA Pd: 69W
Ultra fast switching 100% avalanche tested Improved dv/dt capability
High ruggedness Fast switching 100% avalanche tested
Low gate charge(typical19.6nC) Lower Gate Resistance 100% Avalanche Tested
