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Type: N-channel
Vdss:650V
Id: 8A
RDS(on)@Vgs,Id: 550mΩ@10V,2.5A
Vgs(th)@Id: 4.5V@250μA
Pd: 69W
Description
lThis Power MOSFET is produced using Slkor's advanced Super junction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies.
Features
l8A,650V,RDS(onTyp=550mΩ@VGS=10V
lLow gate charge(typ.Qg=10.1nC)
lHigh ruggedness
lUltra fast switching
l100% avalanche tested
lImproved dv/dt capability
| File Name | Title | Description |
|---|---|---|
| 已压缩-SL8N65CD-TO-252.pdf | （已压缩）SL8N65CD TO-252 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Fast switching 100% avalanche tested Improved dv/dt capability
Gate Charge (Typical 18.5nC) Improved dv/dt Capability 100% Avalanche Tested
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized
Fast switching 100% avalanche tested Improved dv/dt capability
Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)
Improved dv/dt capability High density cell design for ultra low Rdson Excellent package for good heat dissipation
Super high density cell designfor extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability
Good stability and uniformity with high Eas Excellent package for good heat dissipation Special process technology for high ESD capability
