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Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Features：
● Extremely high dv/dt capability
● 100% avalanche tested
● Gate charge minimized
● Very low intrinsic capacitances
● Very good manufacturing repeatibility
Applications：
● Switching application
| File Name | Title | Description |
|---|---|---|
| SL5N100D.PDF | SL5N100D | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Fast switching 100% avalanche tested Improved dv/dt capability
Type: N-channel Vdss:650V Id: 8A RDS(on)@Vgs,Id: 550mΩ@10V,2.5A Vgs(th)@Id: 4.5V@250μA Pd: 69W
Gate Charge (Typical 18.5nC) Improved dv/dt Capability 100% Avalanche Tested
Fast switching 100% avalanche tested Improved dv/dt capability
Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)
Improved dv/dt capability High density cell design for ultra low Rdson Excellent package for good heat dissipation
Super high density cell designfor extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability
Good stability and uniformity with high Eas Excellent package for good heat dissipation Special process technology for high ESD capability
