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High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Features
lHigh density cell design for ultra low Rdson
lFully characterized avalanche voltage and current
lExcellent package for good heat dissipation
Application
lPWM applications
lPower management
lLoad switch
| File Name | Title | Description |
|---|---|---|
| AOD409 TO-252.pdf | AOD409 TO-252 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Improved dv/dt capability High density cell design for ultra low Rdson Good stability and uniformity with high EAS
Type: P-Channel Vdss: 40V Id: 60A RDS(on)@Vgs,Id: 7.9mΩ@10V,20A Vgs(th)@Id: 1.6V@250uA Pd: 60W
● Advance high cell density Trench technology ● Low RDS(ON) to minimize conductive loss ● Low Gate Charge for fast switching
Type: P-Channel Vdss: -30V Id: -70A RDS(on)@Vgs,Id: 5.1mΩ@-20V,-20A Vgs(th)@Id: 2.5V@-250uA Pd: 90W
Fast switching 100% avalanche tested Improved dv/dt capability
Type: N-channel Vdss:650V Id: 8A RDS(on)@Vgs,Id: 550mΩ@10V,2.5A Vgs(th)@Id: 4.5V@250μA Pd: 69W
Gate Charge (Typical 18.5nC) Improved dv/dt Capability 100% Avalanche Tested
100% EAS Guaranteed Green Device Available Super Low Gate Charge
