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Green device available.
Advanced high cell denity trench technology for ultra RDS(ON).
Excellent package for good heat dissipation.
Our advantages:
China's manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. Slkor semiconductor electronic components can fully replace those of major international brands in 99% of applications without the need for testing verification.
Slkor alternative equivalents for Infineon:
| Infineon | Slkor Replacements | ||
| Part Number | Part Number | Product Category | Package |
| IRF640NPBF | IRF640 | MOSFET | TO-220 |
| IRFR5305TRPBF | IRFR5305 | MOSFET | TO-252 |
| TLE4275 | SL4275 | LDO | TO-252 |
| TLE4284 | SL4284 | LDO | TO-252 |
| TLF4949 | SL4949 | LDO | SOP-8 |
| TLE42754G | SL4275-G | LDO | TO-263-5 |
| TLE4264 | SL4264-2 | LDO | SOT-223 |
| TLE42744 | SL42744D | LDO | TO-252-3 |
| TLE42764 | SL42764 | LDO | TO-252-5 |
| BCR401 | SL401 | Gate Driver IC | SOT-23 |
| BTS3405G | SL3405S | Smart Power Switches | SOP-8 |
| TLE4264 | SL4264-2 | Zener Diode | SOT-223 |
| TLE8366 | SL8366 | DC-DC Regulator | ESOP-8 |
| IR21814/IRS21814 | SL21814 | Gate Driver IC | SOP-14 |
| IR2110S | SL2110 | Gate Driver IC | SOP-16W |
| IRS2003S | SL2003 | Gate Driver IC | SOP-8 |
| IRS2004 | SL2004 | Gate Driver IC | SOP-8 |
| IR2103S | SL2103 | Gate Driver IC | SOP-8 |
Description :
This p-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. it can be used in a wide variety of applications.
Features :
●Vs=-60V,l=-30A,RDS(ON)<35m Ω @VGS=-10V
●Low gate charge.
●Green device available.
●Advanced high cell denity trench technology for ultra RDS(ON).
●Excellent package for good heat dissipation.
| File Name | Title | Description |
|---|---|---|
| IRFR5305 TO-252.pdf | IRFR5305 TO-252 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Static drain-source on-resistance: RDS(on)≤150m; Enhancement mode; Fast Switching Speed;
High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation
Type：P-Channel Vdss：-20V Id：-2.8A Pd：400mW RDS(on)@Vgs,Id：112mΩ@4.5V,2.8A Vgs(th)@Id：1V@250μA
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
● Low RDS(on): It has an RDS(on) of 130mΩ at 10V Vgs and 2.2A Id, ensuring efficient performance with minimal power loss. ● High Current Rating: Capable of handling a maximum current (Id) of 2.2A, making it suitable for medium-power applications. ● Power Dissipation: With a maximum power dissipation (Pd) of 1000mW, it offers reliable operation even under moderate load conditions.
High power and current handing capability Lead free product is acquired Surface mount package
High power and current handing capability Lead free product is acquired Surface mount package
High power and current handing capability Lead free product is acquired Surface mount package
