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● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
Slkor alternative equivalents to AOS.
| AOS | Slkor Replacements | ||
| Part Number | Part Number | Product Category | Package |
| AO3409 | SL3409 | MOSFET | SOT-23 |
| AO4459 | SL4459 | MOSFET | SOP-8 |
P-Channel MOSFET
DESCRIPTION
The SL4459 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
GENERAL FEATURES
● VDS = -30V,ID = -6.5A
● RDS(ON) < 46m? @ VGS=-10V
● RDS(ON) < 72m? @ VGS=-4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
● PWM applications
● Load switch
● Power management
| File Name | Title | Description |
|---|---|---|
| SL4459 SOP-8.PDF | SL4459 SOP-8 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
● Low RDS(on): It has an RDS(on) of 130mΩ at 10V Vgs and 2.2A Id, ensuring efficient performance with minimal power loss. ● High Current Rating: Capable of handling a maximum current (Id) of 2.2A, making it suitable for medium-power applications. ● Power Dissipation: With a maximum power dissipation (Pd) of 1000mW, it offers reliable operation even under moderate load conditions.
Green device available. Advanced high cell denity trench technology for ultra RDS(ON). Excellent package for good heat dissipation.
High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation
Type：P-Channel Vdss：-20V Id：-2.8A Pd：400mW RDS(on)@Vgs,Id：112mΩ@4.5V,2.8A Vgs(th)@Id：1V@250μA
Static drain-source on-resistance: RDS(on)≤150m; Enhancement mode; Fast Switching Speed;
High power and current handing capability Lead free product is acquired Surface mount package
High power and current handing capability Lead free product is acquired Surface mount package
High power and current handing capability Lead free product is acquired Surface mount package
