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Type：P-Channel
Vdss：-20V
Id：-2.8A
Pd：400mW
RDS(on)@Vgs,Id：112mΩ@4.5V,2.8A
Vgs(th)@Id：1V@250μA
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
Slkor alternative equivalents to VISHA
| VISHA | Slkor Replacements | ||
| Part Number | Part Number | Product Category | Package |
| SI2301CDS | SL2301 | MOSFET | SOT-23 |
| SI2302CDS | SL2302 | MOSFET | SOT-23 |
| SI2309CDS | SL2309 | MOSFET | SOT-23 |
| 2N7002-T1-E3 | 2N7002 | MOSFET | SOT-23 |
| 2N7002K-T1-GE3 | 2N7002K | MOSFET | SOT-23 |
| SMAJ5.0A | SMAJ5.0A | TVS | SMA |
| TCLT1007 | SL-1007 | Optocoupler | SMD-4 |
| TCLT1008 | SL-1008 | Optocoupler | SMD-4 |
| TCLT1009 | SL-1009 | Optocoupler | SMD-4 |
| LL4148-GS08 | LL4148 | Swiching Diode | LL-34 |
| SMBJ6.5CA-E3/52 | SMBJ6.5CA | TVS | SMB |
| SMBJ5.0CA-E3/52 | SMBJ5.0A | TVS | SMB |
| SMBJ15A-E3/52 | SMBJ15A | TVS | SMB |
| SMBJ36CA-E3/52 | SMBJ36CA | TVS | SMB |
Description
A P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
Features
?1.8 V RDSon rated for Low Voltage Gate Drive
?Very fast switching
?Trench MOSFET technology
Applications
?Relay driver
?High-speed line driver
?High-side loadswitch
?Switching circuits
| File Name | Title | Description |
|---|---|---|
| SL2301.pdf | SL2301 | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation
Green device available. Advanced high cell denity trench technology for ultra RDS(ON). Excellent package for good heat dissipation.
High power and current handing capability Lead free product is acquired Surface mount package
Type：N-Channel Vdss：20V Id：2.8A Pd：400mW RDS(on)@Vgs,Id：35mΩ@4.5V,3.6A Vgs(th)@Id：950mV@50μA
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
● Low RDS(on): It has an RDS(on) of 130mΩ at 10V Vgs and 2.2A Id, ensuring efficient performance with minimal power loss. ● High Current Rating: Capable of handling a maximum current (Id) of 2.2A, making it suitable for medium-power applications. ● Power Dissipation: With a maximum power dissipation (Pd) of 1000mW, it offers reliable operation even under moderate load conditions.
Static drain-source on-resistance: RDS(on)≤150m; Enhancement mode; Fast Switching Speed;
High power and current handing capability Lead free product is acquired Surface mount package
