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MMDT3946 BJT Transistor SOT-363
Download datasheet InquirySmall Surface Mount Transistor
FEATURES
Complementary pair.
One 3904-Type NPN.
One 3906-Type PNP.
ldeal for low power amplification and switching
Ultra-Small surface mount package.
Expitaxial planar die construction.
APPLICATIONS
General switching and amplification.
| File Name | Title | Description |
|---|---|---|
| MMDT3946.pdf | MMDT3946 | - |
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VCC(V)：5V IO(mA)：100mA VI(off)(V)：4.9V VI(on)(V)：0.2V fT(MHz)：- Package：SOT-363
The MMDT4401 is a high-performance PNP bipolar transistor housed in a compact SOT-363 package. It is designed for various electronic applications, offering reliable switching and amplification capabilities in a small footprint.
The MMDT5451 NPN+PNP Bipolar Transistor is engineered to deliver exceptional efficiency and reliability in high-frequency applications. With a robust collector-emitter voltage rating of 160V and a maximum collector current of 0.2A, this transistor is designed for high-stress environments, ensuring long-lasting performance under demanding conditions.
MMDT4413 NPN+PNP Digital Transistor features a maximum collector-emitter voltage (Vceo) of 40V, making it suitable for various low to moderate voltage applications. With a collector current (Ic) rating of 200mA and a power dissipation (Pd) capability of 0.2W, this transistor ensures efficient operation and thermal management. It is also designed to withstand extreme temperatures, with a working temperature range of -55°C to 150°C.
The MMDT5401 PNP Digital Transistor engineered to deliver exceptional performance in high-voltage and high-frequency applications. With a Vceo rating of 150V and a maximum Ic of 600mA, this transistor is designed to excel in demanding environments where reliability and efficiency are paramount. Its robust construction supports a high working temperature of up to 150°C, making it suitable for various industrial and high-temperature applications.
The MMDT3904 is a versatile NPN bipolar junction transistor designed for precision switching and amplification tasks in electronic circuits. Featuring a collector-emitter voltage rating (Vceo) of 40V and a maximum collector current (Ic) of 0.2A, it offers efficient performance in a compact form factor. With a power dissipation rating (Pd) of 0.2W, it is suitable for applications requiring moderate power handling capabilities.
The MMDT3906 is a high-performance double PNP bipolar junction transistor, engineered for efficient switching and amplification in various electronic applications. With a collector-emitter voltage rating (Vceo) of 40V and a maximum collector current (Ic) of 200mA, it offers robust performance in a compact package. The transistor is designed to handle up to 200mW of power dissipation, ensuring reliability under varying operational conditions.
The MBT3946 is a versatile bipolar junction transistor (BJT) capable of operating in both NPN and PNP configurations, offering flexibility in various circuit designs. With a maximum collector-emitter voltage (Vceo) of 40V and a collector current (Ic) rating of 200mA, it is suitable for low-power applications where moderate voltage and current handling are required. The transistor is designed to dissipate up to 150mW of power (Pd) and operates efficiently at frequencies up to 300MHz (fT), making it suitable for applications requiring high-frequency performance.
