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MMDT4413 NPN+PNP Digital Transistor features a maximum collector-emitter voltage (Vceo) of 40V, making it suitable for various low to moderate voltage applications. With a collector current (Ic) rating of 200mA and a power dissipation (Pd) capability of 0.2W, this transistor ensures efficient operation and thermal management. It is also designed to withstand extreme temperatures, with a working temperature range of -55°C to 150°C.
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Description:
MMDT4413 NPN+PNP Digital Transistor features a maximum collector-emitter voltage (Vceo) of 40V, making it suitable for various low to moderate voltage applications. With a collector current (Ic) rating of 200mA and a power dissipation (Pd) capability of 0.2W, this transistor ensures efficient operation and thermal management. It is also designed to withstand extreme temperatures, with a working temperature range of -55°C to 150°C.
FEATURES
● Complementary Pair
● One 4401-Type NPN
● One 4403-Type PNP
● Epitaxial Planar Die Construction
● Ideal for Low Power Amplification and Switching
Application:
MMDT4413 NPN+PNP Digital Transistor is perfectly suited for a variety of electronic applications, including:
● Switching Circuits: Ideal for low to moderate power switching applications due to its efficient switching characteristics and low saturation voltage.
● Amplification: Suitable for high-frequency amplification circuits, leveraging its high transition frequency for reliable performance.
● Signal Processing: Effective in signal processing applications where high-speed operation and stable performance are crucial.
● Power Management: Reliable for power management systems that require precise control and handling of moderate current levels.
| File Name | Title | Description |
|---|---|---|
| MMDT4413 SOT-363.pdf | MMDT4413 SOT-363 | - |
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Vceo:12V Ic:100mA Pd:1000mW VCE:- fT:10GHz Working temperature:150℃@(Tj)
Vceo:6V Ic:80mA Pd:380mW VCE:- fT:11GHz Working temperature:150℃@(Tj)
