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The MMDT3904 is a versatile NPN bipolar junction transistor designed for precision switching and amplification tasks in electronic circuits. Featuring a collector-emitter voltage rating (Vceo) of 40V and a maximum collector current (Ic) of 0.2A, it offers efficient performance in a compact form factor. With a power dissipation rating (Pd) of 0.2W, it is suitable for applications requiring moderate power handling capabilities.
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Description:
The MMDT3904 is a versatile NPN bipolar junction transistor designed for precision switching and amplification tasks in electronic circuits. Featuring a collector-emitter voltage rating (Vceo) of 40V and a maximum collector current (Ic) of 0.2A, it offers efficient performance in a compact form factor. With a power dissipation rating (Pd) of 0.2W, it is suitable for applications requiring moderate power handling capabilities.
Features:
Epitaxial planar die construction.
Ideal for low power amplification and
switching.
Ultra-small surface mount package
Also available in lead free version.
Application:
General switching and amplification
| File Name | Title | Description |
|---|---|---|
| MMDT3904_2021-12-24.PDF | MMDT3904_2021-12-24 | - |
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Vceo:12V Ic:100mA Pd:1000mW VCE:- fT:10GHz Working temperature:150℃@(Tj)
Vceo:6V Ic:80mA Pd:380mW VCE:- fT:11GHz Working temperature:150℃@(Tj)
Vceo:12V Ic:100mA Pd:150mW VCE:- fT:8GHz Working temperature:150℃@(Tj)
Vceo:4.5V Ic:100nA Pd:135mW VCE:- fT:25GHz Working temperature:150℃@(Tj)
Vceo:15V Ic:300mA Pd:2000mW VCE(sat):- fT:8.5GHz Working temperature:-40℃~150℃@(Tj)
