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Vceo:12V
Ic:100mA
Pd:150mW
VCE:-
fT:8GHz
Working temperature:150℃@(Tj)
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
Description
The BFS520 is a high-frequency low-noise transistor manufactured using planar NPN silicon epitaxial bipolar technology. It features high power gain and low noise characteristics. Packagedin an ultra- compact SOT-323 package, it is suitable for high-density surface-mount applications,primarily used in VHF, UHF, CATV, and other high-frequency low-noise amplifiers.
FEATURES
Collector-Emitter Voltage (Vceo): 12VCollector Current (Ic): 100mAPower Dissipation (Pd): 150mWTransition Frequency (fT): 8GHzWorking Temperature: Up to 150°C (Tj)
Application
Ideal for use in high-frequency circuits, RF amplifiers, and signal processing systems where rapid switching and stability are crucial. Its high-temperature tolerance makes it suitable for industrial and aerospace applications, providing durability in extreme conditions.
| File Name | Title | Description |
|---|---|---|
| BFS520-C.pdf | BFS520-C | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Vceo:6V Ic:80mA Pd:380mW VCE:- fT:11GHz Working temperature:150℃@(Tj)
The 2SC4228 is an ultra-high-frequency low-noise transistor using planar NPN silicon epitaxial bipolar technology. It features high power gain and low noise characteristics. Due to its ultra-small SOT-323 package, it is particularly suited for high-density surface-mount applications. It is primarily used in VHF and UHF low-noise amplifiers.
The BC817-25W is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification tasks in electronic circuits. Encapsulated in a SOT-323 surface-mount package, this transistor offers reliable performance with a maximum collector-emitter voltage (Vceo) of 45V and a maximum continuous collector current (Ic) of 500mA. Its compact size and robust specifications make it suitable for a wide range of applications where space and performance are crucial considerations.
2SC4901 is an ultrahigh frequency low noise transistor; with the plane NPN silicon epitaxy bipolar technology, it has characteristics such as high power gains, low noises and large dynamic ranges. With the SOT-323 package, it is applicable to high-density surface paster installation, mainly used for high frequency low noise wide-band amplifiers such as VHF, UHF and CATV.
Vceo:12V Ic:100mA Pd:1000mW VCE:- fT:10GHz Working temperature:150℃@(Tj)
Vceo:4.5V Ic:100nA Pd:135mW VCE:- fT:25GHz Working temperature:150℃@(Tj)
Vceo:15V Ic:300mA Pd:2000mW VCE(sat):- fT:8.5GHz Working temperature:-40℃~150℃@(Tj)
Vceo:40V Ic:2A Pd:300mW VCE(sat):0.5V fT:100MHz Working temperature:-
