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2SC4901 is an ultrahigh frequency low noise transistor; with the plane NPN silicon epitaxy bipolar technology, it has characteristics such as high power gains, low noises and large dynamic ranges. With the SOT-323 package, it is applicable to high-density surface paster installation, mainly used for high frequency low noise wide-band amplifiers such as VHF, UHF and CATV.
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Description
2SC4901 is an ultrahigh frequency low noise transistor; with the plane NPN
silicon epitaxy bipolar technology, it has characteristics such as high power gains,
low noises and large dynamic ranges. With the SOT-323 package, it is applicable to
high-density surface paster installation, mainly used for high frequency low noise
wide-band amplifiers such as VHF, UHF and CATV.
Features:
● Type: NPN Bipolar Transistor
Applications:
● RF Amplification: Suitable for use in RF amplifiers where high gain and low noise are critical, such as in communication systems and radar applications.
Main Characteristics
High gains:︱S21e︱2typical value of 13.5dB @ VCE=5V, IC=20mA, f=0.9GHz
Low noise: NF typical value of 1.6dB @ VCE=5V, IC=5mA, f=0.9GHz
Gain bandwidth product: fT typical value of 9GHz @ VCE=5V, IC=20mA, f=0.9GHz
| File Name | Title | Description |
|---|---|---|
| 2SC4901 YK- SOT-323.pdf | 2SC4901 YK- SOT-323 | - |
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Vceo:6V Ic:80mA Pd:380mW VCE:- fT:11GHz Working temperature:150℃@(Tj)
Vceo:12V Ic:100mA Pd:150mW VCE:- fT:8GHz Working temperature:150℃@(Tj)
The 2SC4228 is an ultra-high-frequency low-noise transistor using planar NPN silicon epitaxial bipolar technology. It features high power gain and low noise characteristics. Due to its ultra-small SOT-323 package, it is particularly suited for high-density surface-mount applications. It is primarily used in VHF and UHF low-noise amplifiers.
The BC817-25W is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification tasks in electronic circuits. Encapsulated in a SOT-323 surface-mount package, this transistor offers reliable performance with a maximum collector-emitter voltage (Vceo) of 45V and a maximum continuous collector current (Ic) of 500mA. Its compact size and robust specifications make it suitable for a wide range of applications where space and performance are crucial considerations.
Vceo:12V Ic:100mA Pd:1000mW VCE:- fT:10GHz Working temperature:150℃@(Tj)
Vceo:4.5V Ic:100nA Pd:135mW VCE:- fT:25GHz Working temperature:150℃@(Tj)
Vceo:15V Ic:300mA Pd:2000mW VCE(sat):- fT:8.5GHz Working temperature:-40℃~150℃@(Tj)
Vceo:40V Ic:2A Pd:300mW VCE(sat):0.5V fT:100MHz Working temperature:-
