Display 3D model
Service hotline
+86 0755-83044319
Vceo:15V
Ic:300mA
Pd:2000mW
VCE(sat):-
fT:8.5GHz
Working temperature:-40℃~150℃@(Tj)
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
Description
● This chip is manufactured using silicon epitaxial technology, featuring high power gain amplification, wide bandwidth,low noise, low leakage current, small junction capacitance characteristics, a large dynamic range, and ideal current linearity.
● It is mainly appliedin ultra-high frequency microwave and high frequency broadband low-noise amplifiers, such as CATV video amplifiers, wireless
transceiver modules, various long-distance remote controllers, security alarms, analog-digital cordless telephones, and other related products.Suitable for medium power and high frequency signal amplification.
● Collector-emitter breakdown voltage: BVCEO = 15V, maximum collector current:
ICM = 200mA, power dissipation:PC = 2W,characteristic frequency: fT = 8.5GHz.
● Package type: SOT-89 Body marking (Marking): S59
Features
● Vceo (Collector-Emitter Voltage): 15V, ensuring reliable operation within various circuit configurations.
● Ic (Collector Current): Capable of handling up to 300mA, making it suitable for both low and medium power applications.
● Pd (Power Dissipation): High power dissipation of 2000mW, which allows for effective heat management and increased longevity of the device.
● fT (Transition Frequency): An impressive transition frequency of 8.5GHz, allowing for high-speed operation in RF applications.
● Working Temperature Range: Operates efficiently in extreme conditions, with a temperature range of -40℃ to 150℃, ensuring reliability in diverse environments.
Application:
The BFU590Q is perfectly suited for applications in:
● RF Amplifiers: Ideal for use in radio frequency applications where high speed and gain are critical.
● Switching Circuits: Can be utilized in various switching applications due to its high current handling capabilities.
● Signal Processing: Functions effectively in signal processing circuits, enhancing overall system performance.
● Consumer Electronics: Suitable for a wide range of consumer electronic devices, providing efficient power management and signal amplification.
| File Name | Title | Description |
|---|---|---|
| BFU590Q.pdf | BFU590Q | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Vceo:12V Ic:100mA Pd:1000mW VCE:- fT:10GHz Working temperature:150℃@(Tj)
The 2SC4373-Y is a high-performance NPN bipolar transistor housed in a compact SOT-89 package. It is designed for various electronic applications, offering reliable switching and amplification capabilities in a small footprint.
The 2SC2884-Y NPN Bipolar Transistor is designed for advanced electronic applications requiring high efficiency and reliability. With a maximum collector-emitter voltage (Vceo) of 30V and a collector current (Ic) of 0.8A, this transistor offers robust performance for various circuit configurations. It is engineered to handle power dissipation of up to 500mW while maintaining a low collector-emitter saturation voltage (VCE(sat)) of 0.5V at 0.5A collector current and 0.02A base current. ?
2SD1664-R NPN Digital Transistor designed to meet the rigorous demands of modern electronic applications. With a maximum collector-emitter voltage (VCEO) of 32V and a current rating (IC) of 1A, this transistor is engineered to deliver reliable and efficient performance across a wide range of operating conditions. The device features a maximum power dissipation (PD) of 0.5W, making it suitable for compact and power-sensitive applications
The 2SD1766-R NPN Digital Transistor is a high-performance semiconductor device designed to deliver reliable and efficient performance in a variety of electronic applications. With its robust voltage and current handling capabilities, this transistor is an ideal choice for demanding circuits requiring precise control and high-speed switching.
The 2SD965A-R is a high-performance NPN bipolar transistor designed for versatile electronic applications where robustness and efficiency are paramount. Encased in a TO-220 package, this transistor offers a maximum collector-emitter voltage (Vceo) of 30V and can handle a continuous collector current (Ic) of up to 5A. With a power dissipation (Pd) rating of 750mW, it efficiently manages power under various operating conditions. The 2SD965A-R features a low saturation voltage (VCE(sat)) of 1V at 3A collector current and 100mA base current, ensuring minimal power loss during operation. Its high current gain (hFE) of 340 at 500mA collector current and 2V collector-emitter voltage (Vce) facilitates reliable amplification and switching in diverse circuit designs.
BCX56-16 is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. With a voltage rating of 80V and a maximum current rating of 1A, it offers robust performance in a compact package. This transistor is suitable for use in various electronic circuits where moderate power handling and reliable switching capabilities are required.
The SS8050 is a versatile NPN bipolar transistor designed for general-purpose amplification and switching applications. With a maximum collector-emitter voltage (Vceo) of 25V and a collector current (Ic) rating of 1.5A, it provides robust performance suitable for a wide range of electronic circuits.
