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The MMDT5451 NPN+PNP Bipolar Transistor is engineered to deliver exceptional efficiency and reliability in high-frequency applications. With a robust collector-emitter voltage rating of 160V and a maximum collector current of 0.2A, this transistor is designed for high-stress environments, ensuring long-lasting performance under demanding conditions.
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Description:
The MMDT5451 NPN+PNP Bipolar Transistor is engineered to deliver exceptional efficiency and reliability in high-frequency applications. With a robust collector-emitter voltage rating of 160V and a maximum collector current of 0.2A, this transistor is designed for high-stress environments, ensuring long-lasting performance under demanding conditions.
FEATURES
● Designed for high-stress environments.
Application:
● High-Frequency Amplifiers: Ideal for use in RF amplifiers and high-speed switching circuits, leveraging its high transition frequency and low saturation voltage.
● Power Switching: Effective in power switching applications where reliable performance and high voltage tolerance are crucial.
● Signal Processing: Suitable for applications involving signal amplification and processing, benefiting from its low saturation voltage and high-frequency response.
● Automotive Electronics: Reliable operation at elevated temperatures makes it suitable for automotive electronics and other high-temperature environments.
| File Name | Title | Description |
|---|---|---|
| MMDT5451 SOT-363.pdf | MMDT5451 SOT-363 | - |
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Vceo:12V Ic:100mA Pd:1000mW VCE:- fT:10GHz Working temperature:150℃@(Tj)
Vceo:6V Ic:80mA Pd:380mW VCE:- fT:11GHz Working temperature:150℃@(Tj)
