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The MMDT3906 is a high-performance double PNP bipolar junction transistor, engineered for efficient switching and amplification in various electronic applications. With a collector-emitter voltage rating (Vceo) of 40V and a maximum collector current (Ic) of 200mA, it offers robust performance in a compact package. The transistor is designed to handle up to 200mW of power dissipation, ensuring reliability under varying operational conditions.
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Description:
The MMDT3906 is a high-performance double PNP bipolar junction transistor, engineered for efficient switching and amplification in various electronic applications. With a collector-emitter voltage rating (Vceo) of 40V and a maximum collector current (Ic) of 200mA, it offers robust performance in a compact package. The transistor is designed to handle up to 200mW of power dissipation, ensuring reliability under varying operational conditions.
Features:
Epitaxial planar die construction.
Ideal for low power amplification and
switching.
Ultra-small surface mount package.
Also available in lead free version.
Applications:
General switching and amplification
| File Name | Title | Description |
|---|---|---|
| MMDT3906.pdf | MMDT3906 | - |
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Type：PNP Vceo: -25V Ic: -1.5A Pd: 1W VCE(sat)@Ic,Ib: -0.5V@-800mA,-80mA fT: 100MHz
Type：PNP Vceo: -25V Ic: -1.5A Pd: 1W VCE(sat)@Ic,Ib: -0.5V@-800mA,-80mA fT: 100MHz
Vceo:-160V Ic:-1A Pd:0.5W VCE(sat):-1.5V fT:15MHz Working temperature:150℃(Tj)
The MMBT3906M is a high-performance PNP bipolar transistor housed in a compact SOT-723 package. It is designed for various electronic applications, offering reliable switching and amplification capabilities in a small footprint.
