Display 3D model
Service hotline
+86 0755-83044319
The MMDT5401 PNP Digital Transistor engineered to deliver exceptional performance in high-voltage and high-frequency applications. With a Vceo rating of 150V and a maximum Ic of 600mA, this transistor is designed to excel in demanding environments where reliability and efficiency are paramount. Its robust construction supports a high working temperature of up to 150°C, making it suitable for various industrial and high-temperature applications.
Download datasheet InquiryOur advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
Description:
The MMDT5401 PNP Digital Transistor engineered to deliver exceptional performance in high-voltage and high-frequency applications. With a Vceo rating of 150V and a maximum Ic of 600mA, this transistor is designed to excel in demanding environments where reliability and efficiency are paramount. Its robust construction supports a high working temperature of up to 150°C, making it suitable for various industrial and high-temperature applications.
FEATURES
● For high voltage amplifier applications
Application:
The 2SA1661-Y PNP Digital Transistor is perfectly suited for a variety of electronic applications, including:
● Power Amplifiers: Ideal for use in power amplification circuits where high voltage and current handling are essential.
● Switching Circuits: Perfect for high-speed switching applications due to its low VCE(sat) and high transition frequency.
● RF and Signal Processing: Suitable for high-frequency applications, including radio frequency circuits and signal processing systems.
● Industrial Equipment: Reliable performance in industrial settings where high operating temperatures are common.
| File Name | Title | Description |
|---|---|---|
| MMDT5401 SOT-363.pdf | MMDT5401 SOT-363 | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
The MMDT4401 is a high-performance PNP bipolar transistor housed in a compact SOT-363 package. It is designed for various electronic applications, offering reliable switching and amplification capabilities in a small footprint.
The MMDT5451 NPN+PNP Bipolar Transistor is engineered to deliver exceptional efficiency and reliability in high-frequency applications. With a robust collector-emitter voltage rating of 160V and a maximum collector current of 0.2A, this transistor is designed for high-stress environments, ensuring long-lasting performance under demanding conditions.
MMDT4413 NPN+PNP Digital Transistor features a maximum collector-emitter voltage (Vceo) of 40V, making it suitable for various low to moderate voltage applications. With a collector current (Ic) rating of 200mA and a power dissipation (Pd) capability of 0.2W, this transistor ensures efficient operation and thermal management. It is also designed to withstand extreme temperatures, with a working temperature range of -55°C to 150°C.
The MMDT3906 is a high-performance double PNP bipolar junction transistor, engineered for efficient switching and amplification in various electronic applications. With a collector-emitter voltage rating (Vceo) of 40V and a maximum collector current (Ic) of 200mA, it offers robust performance in a compact package. The transistor is designed to handle up to 200mW of power dissipation, ensuring reliability under varying operational conditions.
-正面.jpg)
Type：PNP Vceo: -25V Ic: -1.5A Pd: 1W VCE(sat)@Ic,Ib: -0.5V@-800mA,-80mA fT: 100MHz
Type：PNP Vceo: -25V Ic: -1.5A Pd: 1W VCE(sat)@Ic,Ib: -0.5V@-800mA,-80mA fT: 100MHz
Vceo:-160V Ic:-1A Pd:0.5W VCE(sat):-1.5V fT:15MHz Working temperature:150℃(Tj)
The MMBT3906M is a high-performance PNP bipolar transistor housed in a compact SOT-723 package. It is designed for various electronic applications, offering reliable switching and amplification capabilities in a small footprint.
