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The MBT3946 is a versatile bipolar junction transistor (BJT) capable of operating in both NPN and PNP configurations, offering flexibility in various circuit designs. With a maximum collector-emitter voltage (Vceo) of 40V and a collector current (Ic) rating of 200mA, it is suitable for low-power applications where moderate voltage and current handling are required. The transistor is designed to dissipate up to 150mW of power (Pd) and operates efficiently at frequencies up to 300MHz (fT), making it suitable for applications requiring high-frequency performance.
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Description:
The MBT3946 is a versatile bipolar junction transistor (BJT) capable of operating in both NPN and PNP configurations, offering flexibility in various circuit designs. With a maximum collector-emitter voltage (Vceo) of 40V and a collector current (Ic) rating of 200mA, it is suitable for low-power applications where moderate voltage and current handling are required. The transistor is designed to dissipate up to 150mW of power (Pd) and operates efficiently at frequencies up to 300MHz (fT), making it suitable for applications requiring high-frequency performance.
Features:
Applications:
The MBT3946 transistor finds application in a wide range of electronic circuits, including:
| File Name | Title | Description |
|---|---|---|
| MBT3946.pdf | MBT3946 | - |
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Vceo:12V Ic:100mA Pd:1000mW VCE:- fT:10GHz Working temperature:150℃@(Tj)
Vceo:6V Ic:80mA Pd:380mW VCE:- fT:11GHz Working temperature:150℃@(Tj)
Vceo:12V Ic:100mA Pd:150mW VCE:- fT:8GHz Working temperature:150℃@(Tj)
Vceo:4.5V Ic:100nA Pd:135mW VCE:- fT:25GHz Working temperature:150℃@(Tj)
Vceo:15V Ic:300mA Pd:2000mW VCE(sat):- fT:8.5GHz Working temperature:-40℃~150℃@(Tj)
