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VCC(V)：5V
IO(mA)：100mA
VI(off)(V)：4.9V
VI(on)(V)：0.2V
fT(MHz)：-
Package：SOT-363
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
Description
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the SMUN5211DW, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium.
Features
● Simplifies Circuit Design
● Reduces Board Space
● Reduces Component Count
● We declare that the material of product compliance with RoHS requirements.
Application
● Microcontroller Interfacing: Perfect for driving low-power loads and controlling devices in embedded systems.
● Switching Circuits: Effective for on/off control in power management and automation systems.
● LED Drivers: Ideal for efficiently switching LED circuits in lighting applications.
● Signal Amplification: Useful in low-signal amplification tasks within communication devices.
| File Name | Title | Description |
|---|---|---|
| SMUN5211DW.pdf | SMUN5211DW | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
VCC(V)：50V IO(mA)：50mA VI(off)(V)：0.5V VI(on)(V)：3V fT(MHz)：250MHz Package：SOT-323
VCC(V)：50V IO(mA)：100mA VI(off)(V)：0.5V VI(on)(V)：3V fT(MHz)：250MHz Package：SOT-323
The DTC143EUA NPN Digital Transistor SOT-323 is designed for efficient, high-frequency performance in compact applications. This transistor operates with a maximum collector-emitter voltage (VCC) of 50V and a high current handling capability of up to 100mA. Featuring a low input voltage for turn-off (VI(off)) of 0.5V and a turn-on voltage (VI(on)) of 3V, it ensures reliable switching operations. With an impressive transition frequency (fT) of 250MHz, this component delivers superior speed and performance. The transistor comes in a space-saving SOT-323 package, ideal for modern electronic designs where size and efficiency are critical.
The UMC3N NPN+PNP Digital Transistor SOT-323 is a high-performance component designed to meet rigorous electronic needs. With a VCC of -50V and an IO rating of -50mA, this transistor provides robust performance for various circuits. The voltage thresholds are finely tuned with VI(off) at -0.5V and VI(on) at -3V, ensuring precise control over signal flow. With a high transition frequency of 250MHz, this transistor excels in high-speed applications. Packaged in the compact SOT-353, it is ideal for space-constrained environments.
Our transistor operates at a maximum VCC of 50V, making it suitable for high-voltage applications while maintaining stable operation. It supports a current output of up to 100mA, ensuring reliable performance in various circuit configurations. The transistor has a low turn-off voltage (VI(off)) of just 0.3V and a turn-on voltage (VI(on)) of 2.5V, which facilitates precise switching control and enhances circuit efficiency. With a transition frequency (fT) of 250MHz, it supports high-speed operation, making it ideal for fast-switching applications. Packaged in a compact SOT-23 form factor, it is well-suited for space-constrained designs.
This transistor is engineered to operate efficiently at high frequencies while maintaining a robust operating range. With a maximum collector-emitter voltage of -50V and a high transition frequency of 250MHz, it ensures reliable operation for demanding electronic circuits.
The MMDT5451 NPN+PNP Bipolar Transistor is engineered to deliver exceptional efficiency and reliability in high-frequency applications. With a robust collector-emitter voltage rating of 160V and a maximum collector current of 0.2A, this transistor is designed for high-stress environments, ensuring long-lasting performance under demanding conditions.
The MMST5551 NPN Digital Transistor engineered to deliver exceptional reliability and efficiency in demanding electronic applications. With a robust maximum collector-emitter voltage (Vceo) of 160V and a maximum collector current (Ic) of 600mA, this transistor is designed for use in high-voltage and high-current circuits. It excels in scenarios requiring high-frequency operation and has a wide operational temperature range, making it suitable for challenging environments.
