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● High density cell design for ultra low RDS(ON)
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
General Description
The SL60P03D is a high-performance P-Channel Enhancement MOSFET housed in a robust TO-252 package. Designed for efficient high-current switching and control, this MOSFET is optimized for applications requiring low on-resistance and high reliability. With its wide voltage range and substantial current handling capability, the SL60P03D is well-suited for demanding electronic circuits and power management tasks.
Features
● High density cell design for ultra low RDS(ON)
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
Applications
● Battery and loading switching
● Excellent package for good heat dissipation
| File Name | Title | Description |
|---|---|---|
| SL60P03D TO-252.pdf | SL60P03D TO-252 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
● Green device available. ● Advanced high cell denity trench technology for ultra Iow RDS(ON). ● Excellent package for good heat dissipation.
Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology
Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available
Green Device Available Excellent CdV/dt effect decline Advanced high cell densityTrench technology
Improved dv/dt capability High density cell design for ultra low Rdson Good stability and uniformity with high EAS
High density cell design for ultra low Rdson Good stability and uniformity with high EAs Excellent package for good heat dissipation
High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
