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● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● Description:
This N-Channel MOSFET maximum Drain-Source Voltage (Vdss) of 30V, making it ideal for a wide range of electronic applications. With a maximum Continuous Drain Current (Id) of 6A and a Power Dissipation (Pd) of 2W, it ensures efficient power handling and thermal stability. The low RDS(on) of 19mΩ at Vgs of 10V and Id of 5.6A ensures minimal conduction losses, while the Gate-Source Threshold Voltage (Vgs(th)) is just 1V at 250μA, facilitating easy drive and control.
● Features:
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● Application:
● Battery protection
● Load switch
● Power management
| File Name | Title | Description |
|---|---|---|
| SL4606A SOP-8.pdf | SL4606A SOP-8 | - |
| RoHS-1.pdf | RoHS | - |
| REACH.pdf | REACH | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology
Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available
Green Device Available Excellent CdV/dt effect decline Advanced high cell densityTrench technology
● Fast switching ● 100% avalanche tested ● Improved dv/dt capability
● Leading trench technology for low RDS(on) ● Low Gate Charge
● Leading trench technology for low RDS(on) ● Low Gate Charge
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
