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● Leading trench technology for low RDS(on)
● Low Gate Charge
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
General Description
The FDN304P P-Channel Enhancement MOSFET is designed to deliver high performance and reliability in negative voltage applications. Packaged in a space-efficient SOT-23 format, this MOSFET provides exceptional switching capabilities and low on-resistance, making it an ideal choice for a wide range of electronic circuits requiring efficient control and power management.
Features
● Leading trench technology for low RDS(on)
● Low Gate Charge
Applications
● Video monitor
● Power management
| File Name | Title | Description |
|---|---|---|
| FDN304P SOT-23.pdf | FDN304P SOT-23 | - |
| RoHS-1.pdf | RoHS | - |
| REACH.pdf | REACH | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available
Green Device Available Excellent CdV/dt effect decline Advanced high cell densityTrench technology
● Leading trench technology for low RDS(on) ● Low Gate Charge
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Leading trench technology for low RDS(on) ● Low Gate Charge
The SL2301D P-Channel MOSFET in SOT-23 offers -20V Vds, -2.3A drain current, and 0.7W power dissipation, with low RDS(on) and gate charge for efficient switching.
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
