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The SL2301D P-Channel MOSFET in SOT-23 offers -20V Vds, -2.3A drain current, and 0.7W power dissipation, with low RDS(on) and gate charge for efficient switching.
Download datasheet Inquiry● Description:
The SL2301D P-Channel Enhancement MOSFET SOT-23 is designed to meet the demands of modern electronic applications. With robust specifications and efficient operation, this MOSFET is ideal for switching and amplification tasks in various circuits. The device features a maximum drain-source voltage of -20V, a continuous drain current of -2.3A, and a power dissipation of 0.7W, ensuring reliable performance across a wide range of operating conditions.
● Features:
● Leading trench technology for low RDS(on)
● Low Gate Charge
● Application:
● Video monitor
● Power management
| File Name | Title | Description |
|---|---|---|
| SL2301D SOT-23.pdf | SL2301D SOT-23 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
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Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available
Green Device Available Excellent CdV/dt effect decline Advanced high cell densityTrench technology
● Leading trench technology for low RDS(on) ● Low Gate Charge
● Leading trench technology for low RDS(on) ● Low Gate Charge
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Leading trench technology for low RDS(on) ● Low Gate Charge
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
