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Green Device Available
Excellent CdV/dt effect decline
Advanced high cell densityTrench technology
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
General Description
The SL3423 P-Channel Enhancement MOSFET, presented in a compact SOT-23 package, is engineered to offer high performance and efficiency for a variety of switching and control applications. With its robust specifications, including a low on-resistance and high current capability, the SL3423 is ideal for use in low-side switching in consumer and industrial electronics where reliable performance and space efficiency are paramount.
Features
● Super Low Gate Charge
● Green Device Available
● Excellent CdV/dt effect decline
● Advanced high cell densityTrench technology
Applications
● High-Side Switching: Suitable for high-side switching applications where efficient control and compact size are essential.
● Power Management: Ideal for power management circuits requiring reliable performance and minimal heat dissipation.
● Consumer Electronics: Effective in various consumer electronic devices where space-saving and efficient power handling are critical.
| File Name | Title | Description |
|---|---|---|
| SL3423 SOT-23.pdf | SL3423 SOT-23 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available
● Leading trench technology for low RDS(on) ● Low Gate Charge
● Leading trench technology for low RDS(on) ● Low Gate Charge
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Leading trench technology for low RDS(on) ● Low Gate Charge
The SL2301D P-Channel MOSFET in SOT-23 offers -20V Vds, -2.3A drain current, and 0.7W power dissipation, with low RDS(on) and gate charge for efficient switching.
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
