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Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
General Description
The is the highest performance trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved.
Features
● Advanced high cell density Trench technology
● Super Low Gate Charge
● Excellent CdV/dt effect decline
● 100% EAS Guaranteed
● Green Device Available
Applications
● High Frequency Point-of-Load Synchronous Buck Converter.
● Networking DC-DC Power System
● Load Switch
| File Name | Title | Description |
|---|---|---|
| SL4041 SOT-23-3L.pdf | SL4041 SOT-23-3L | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available
Green Device Available Excellent CdV/dt effect decline Advanced high cell densityTrench technology
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
● Fast switching ● 100% avalanche tested ● Improved dv/dt capability
● Leading trench technology for low RDS(on) ● Low Gate Charge
● Leading trench technology for low RDS(on) ● Low Gate Charge
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
