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High density cell design for ultra low Rdson
Good stability and uniformity with high EAs
Excellent package for good heat dissipation
General Features
● VDS =60V. ID =17A
RDS(ON)<73 mΩ VGS=10V
RDS(ON)<88 mΩ@VGS=4.5V
● Improved dv/dt capability
● High density cell design for ultra low Rdson
● Good stability and uniformity with high EAs
● Excellent package for good heat dissipation
Applications
● Power switching application
● Hard switched and high frequency circuits
● Motor drive
| File Name | Title | Description |
|---|---|---|
| SL17N06DN1.pdf | SL17N06DN1 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Fast switching 100% avalanche tested Improved dv/dt capability
Type: N-channel Vdss:650V Id: 8A RDS(on)@Vgs,Id: 550mΩ@10V,2.5A Vgs(th)@Id: 4.5V@250μA Pd: 69W
100%Avalanche Tested Fast Switching Improved dv/dt Capability
100% Avalanche Tested Fast Switching Improved dv/dt Capability
Gate Charge (Typical 18.5nC) Improved dv/dt Capability 100% Avalanche Tested
Fast Switching Low ON Resistance Low Gate Charge
