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The MMBT3906M is a high-performance PNP bipolar transistor housed in a compact SOT-723 package. It is designed for various electronic applications, offering reliable switching and amplification capabilities in a small footprint.
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Description
The MMBT3906M is a high-performance PNP bipolar transistor housed in a compact SOT-723 package. It is designed for various electronic applications, offering reliable switching and amplification capabilities in a small footprint.
Features
Complementary to MMBT3904M
Small Package
Application
The MMBT3906M is ideal for use in low-power amplifiers, signal switching, and general-purpose electronic circuits. Its compact size makes it suitable for space-constrained designs in consumer electronics, automotive applications, and industrial devices, making it an ultimate choice for engineers seeking performance and reliability.
| File Name | Title | Description |
|---|---|---|
| S8550T SOT-523.pdf | S8550T SOT-523 | - |
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Type：PNP Vceo: -25V Ic: -1.5A Pd: 1W VCE(sat)@Ic,Ib: -0.5V@-800mA,-80mA fT: 100MHz
Type：PNP Vceo: -25V Ic: -1.5A Pd: 1W VCE(sat)@Ic,Ib: -0.5V@-800mA,-80mA fT: 100MHz
Vceo:-160V Ic:-1A Pd:0.5W VCE(sat):-1.5V fT:15MHz Working temperature:150℃(Tj)
The MMDT4401 is a high-performance PNP bipolar transistor housed in a compact SOT-363 package. It is designed for various electronic applications, offering reliable switching and amplification capabilities in a small footprint.
The MMBT3906M is a high-performance PNP bipolar transistor housed in a compact SOT-723 package. It is designed for various electronic applications, offering reliable switching and amplification capabilities in a small footprint.
This chip is manufactured using silicon epitaxial technology, featuring high power gain, wide bandwidth, and characteristics of low noise, low leakage current, and small junction capacitance. It offers a large dynamic range and ideal current linearity. It is primarily used in ultra-high frequency microwave, VHF, UHF, and CATV high-frequency broadband low-noise amplifiers, such as satellite TV tuners, digital TV set-top boxes, CATV amplifiers, analog-digital cordless phones, radar motion detectors, wireless security alarms, RF modules, and fiber optic modules.
?Introducing the 2SB1132-R PNP Bipolar Transistor, a high-performance component designed for demanding low-voltage and medium-current applications. Housed in a compact SOT-89 package, this transistor features a maximum collector-emitter voltage (Vceo) of -32V, suitable for various switching and amplification needs. With a collector current (Ic) capability of up to -1A and a power dissipation rating of 0.5W, it offers reliable performance in a range of circuits. The 2SB1132-R also boasts a low saturation voltage (VCE(sat)) of 0.5V, ensuring efficient operation.
The 2SC3357 is an ultra-high-frequency low-noise power transistor, utilizing a planar NPN silicon epitaxial bipolar process. It offers high power gain,low noise figure,a wide dynamic range, and excellent current characteristics. Packaged in a SOT-89 surface-mount configuration, it is primarily used in VHF, UHF,and CATV applications for high-frequency broadband low-noise amplification.
