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The 2SC3357 is an ultra-high-frequency low-noise power transistor, utilizing a planar NPN silicon epitaxial bipolar process. It offers high power gain,low noise figure,a wide dynamic range, and excellent current characteristics. Packaged in a SOT-89 surface-mount configuration, it is primarily used in VHF, UHF,and CATV applications for high-frequency broadband low-noise amplification.
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Description
The 2SC3357 is an ultra-high-frequency low-noise power transistor, utilizing a planar NPN silicon epitaxial bipolar process. It offers high power gain,low noise figure,a wide dynamic range, and excellent current characteristics. Packaged in a SOT-89 surface-mount configuration, it is primarily used in VHF, UHF,and CATV applications for high-frequency broadband low-noise amplification.
FEATURES
● High gain: |S21e| typically 10dB
● Low noise: NF typically 1.7dB
● Gain-bandwidth product: fT typically 6.5GHz
Application
● Power Amplifiers: Ideal for high-power amplification applications where high current handling and thermal stability are crucial.
● Switching Power Supplies: Suitable for use in power supplies requiring efficient switching and high power dissipation.
● Motor Drivers: Perfect for driving large motors and other high-current components in industrial and automotive systems.
● High-Current Circuits: Designed to manage substantial current loads in various electronic and electrical systems.
| File Name | Title | Description |
|---|---|---|
| 2SC3357RE.PDF | 2SC3357RE | - |
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Vceo:-160V Ic:-1A Pd:0.5W VCE(sat):-1.5V fT:15MHz Working temperature:150℃(Tj)
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