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?Introducing the 2SB1132-R PNP Bipolar Transistor, a high-performance component designed for demanding low-voltage and medium-current applications. Housed in a compact SOT-89 package, this transistor features a maximum collector-emitter voltage (Vceo) of -32V, suitable for various switching and amplification needs. With a collector current (Ic) capability of up to -1A and a power dissipation rating of 0.5W, it offers reliable performance in a range of circuits. The 2SB1132-R also boasts a low saturation voltage (VCE(sat)) of 0.5V, ensuring efficient operation.
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Description
Introducing the 2SB1132-R PNP Bipolar Transistor, a high-performance component designed for demanding low-voltage and medium-current applications. Housed in a compact SOT-89 package, this transistor features a maximum collector-emitter voltage (Vceo) of -32V, suitable for various switching and amplification needs. With a collector current (Ic) capability of up to -1A and a power dissipation rating of 0.5W, it offers reliable performance in a range of circuits. The 2SB1132-R also boasts a low saturation voltage (VCE(sat)) of 0.5V, ensuring efficient operation.
FEATURES
● Low VCE(sat)
● Compliments to 2SD1664
Application:
● Switching Circuits: Ideal for medium-current switching applications where space and efficiency are important.
● Signal Amplification: Suitable for low-voltage amplification tasks requiring reliable performance.
● Power Management: Effective in power management circuits where low saturation voltage and compact size are advantageous.
● Consumer Electronics: Perfect for use in consumer electronics that demand efficient and reliable transistor performance.
| File Name | Title | Description |
|---|---|---|
| 13001 SOT-23.pdf | 13001 SOT-23 | - |
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Vceo:-160V Ic:-1A Pd:0.5W VCE(sat):-1.5V fT:15MHz Working temperature:150℃(Tj)
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