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This chip is manufactured using silicon epitaxial technology, featuring high power gain, wide bandwidth, and characteristics of low noise, low leakage current, and small junction capacitance. It offers a large dynamic range and ideal current linearity. It is primarily used in ultra-high frequency microwave, VHF, UHF, and CATV high-frequency broadband low-noise amplifiers, such as satellite TV tuners, digital TV set-top boxes, CATV amplifiers, analog-digital cordless phones, radar motion detectors, wireless security alarms, RF modules, and fiber optic modules.
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Description
This chip is manufactured using silicon epitaxial technology, featuring high power gain, wide bandwidth, and characteristics of low noise, low leakage current, and small junction capacitance. It offers a large dynamic range and ideal current linearity. It is primarily used in ultra-high frequency microwave, VHF, UHF, and CATV high-frequency broadband low-noise amplifiers, such as satellite TV tuners, digital TV set-top boxes, CATV amplifiers, analog-digital cordless phones, radar motion detectors, wireless security alarms, RF modules, and fiber optic modules.
Features
Collector-emitter breakdown voltage: VCEO=12V
Maximum collector current: ICM=150mA
Power dissipation: PC=700mW
Characteristic frequency: fT=9.0GHz
Package type: SOT143B, Body marking: RIs-##.
Application
● High-Frequency Amplifiers: Perfect for use in RF and microwave amplifiers where high frequency and low noise performance are critical.
● Switching Circuits: Ideal for high-speed switching applications in communication devices and electronic systems. ● Processing: Suitable for use in signal processing circuits where precise and reliable amplification is required.
● Oscillators: Can be employed in oscillator circuits where high-frequency stability and low power loss are essential.
| File Name | Title | Description |
|---|---|---|
| BFP196 SOT-143B .pdf | BFP196 SOT-143B | - |
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Type：PNP Vceo: -25V Ic: -1.5A Pd: 1W VCE(sat)@Ic,Ib: -0.5V@-800mA,-80mA fT: 100MHz
Type：PNP Vceo: -25V Ic: -1.5A Pd: 1W VCE(sat)@Ic,Ib: -0.5V@-800mA,-80mA fT: 100MHz
Vceo:-160V Ic:-1A Pd:0.5W VCE(sat):-1.5V fT:15MHz Working temperature:150℃(Tj)
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