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Related Products

BCP56-16-SOT-223-3-正面

BCP56-16 NPN Bipolar Transistor SOT-223

The BCP56-16 is a high-performance NPN Bipolar Junction Transistor (BJT) designed for applications requiring robust switching and amplification capabilities. It features a high collector-emitter voltage rating (Vceo) of 80V and a maximum collector current (Ic) of 1A. Packaged in a compact SOT-223 surface-mount package, this transistor offers excellent power dissipation and thermal performance for demanding circuit designs.

BFU580Q-正面

BFU580Q NPN Bipolar Transistor SOT-89

Vceo:12V Ic:100mA Pd:1000mW VCE:- fT:10GHz Working temperature:150℃@(Tj)

BFR380F-正面

BFR380F NPN Bipolar Transistor SOT-323

Vceo:6V Ic:80mA Pd:380mW VCE:- fT:11GHz Working temperature:150℃@(Tj)

BFS520-C-正面

BFS520-C NPN Bipolar Transistor SOT-323

Vceo:12V Ic:100mA Pd:150mW VCE:- fT:8GHz Working temperature:150℃@(Tj)

BFG425W-TOB-正面

BFG425W-TOB NPN Bipolar Transistor SOT-343R

Vceo:4.5V Ic:100nA Pd:135mW VCE:- fT:25GHz Working temperature:150℃@(Tj)

BFU590Q-正面

BFU590Q NPN Bipolar Transistor SOT-89

Vceo:15V Ic:300mA Pd:2000mW VCE(sat):- fT:8.5GHz Working temperature:-40℃~150℃@(Tj)

S8550(TO-92)-正面

S8550 PNP Bipolar Transistor TO-92

Type:PNP Vceo: -25V Ic: -1.5A Pd: 1W VCE(sat)@Ic,Ib: -0.5V@-800mA,-80mA fT: 100MHz

BCP56-16

SMUN5211DW NPN Digital Transistor SOT-363

VCC(V):5V IO(mA):100mA VI(off)(V):4.9V VI(on)(V):0.2V fT(MHz):- Package:SOT-363

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