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The BCP56-16 is a high-performance NPN Bipolar Junction Transistor (BJT) designed for applications requiring robust switching and amplification capabilities. It features a high collector-emitter voltage rating (Vceo) of 80V and a maximum collector current (Ic) of 1A. Packaged in a compact SOT-223 surface-mount package, this transistor offers excellent power dissipation and thermal performance for demanding circuit designs.
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Description:
The BCP56-16 is a high-performance NPN Bipolar Junction Transistor (BJT) designed for applications requiring robust switching and amplification capabilities. It features a high collector-emitter voltage rating (Vceo) of 80V and a maximum collector current (Ic) of 1A. Packaged in a compact SOT-223 surface-mount package, this transistor offers excellent power dissipation and thermal performance for demanding circuit designs.
Features:
● For AF driver and output stages
● High collector current
● Low collector-emitter saturation voltage
● Complementary types: BCP51...BCP53 (PNP)
Applications:
The BCP56-16 NPN transistor is suitable for a variety of applications including:
● Switching Circuits: Efficient switching operations in power supplies, motor controls, and other medium-power switching applications.
● Voltage Regulation: Used in voltage regulators and DC-DC converters due to its high voltage rating and current handling capability.
● Power Management: Ideal for power management circuits in battery-powered devices and portable electronics.
● Audio Amplification: Used in audio amplifiers and speaker driver circuits due to its robust performance and high current handling capacity.
● Industrial Automation: Suitable for control systems and interface circuits where reliable switching and amplification are essential.
| File Name | Title | Description |
|---|---|---|
| BCP56-16.pdf | BCP56-16 | - |
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Vceo:12V Ic:100mA Pd:1000mW VCE:- fT:10GHz Working temperature:150℃@(Tj)
Vceo:6V Ic:80mA Pd:380mW VCE:- fT:11GHz Working temperature:150℃@(Tj)
Vceo:12V Ic:100mA Pd:150mW VCE:- fT:8GHz Working temperature:150℃@(Tj)
Vceo:4.5V Ic:100nA Pd:135mW VCE:- fT:25GHz Working temperature:150℃@(Tj)
Vceo:15V Ic:300mA Pd:2000mW VCE(sat):- fT:8.5GHz Working temperature:-40℃~150℃@(Tj)
