Display 3D model
Service hotline
+86 0755-83044319
The BCP68-25 is a high-performance NPN bipolar junction transistor designed for efficient switching and amplification in electronic circuits. It features a maximum collector-emitter voltage (Vceo) of 20V and a collector current (Ic) rating of 1A, making it suitable for low to medium power applications. With a power dissipation (Pd) of 1.35W and a low collector-emitter saturation voltage (VCE(sat)) of 500mV @ 1A, 100mA, the BCP68-25 ensures minimal power loss and efficient operation in compact designs. Its transition frequency (fT) of 100MHz enables reliable high-frequency signal processing.
Download datasheet InquiryOur advantages:
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
Description:
The BCP68-25 is a high-performance NPN bipolar junction transistor designed for efficient switching and amplification in electronic circuits. It features a maximum collector-emitter voltage (Vceo) of 20V and a collector current (Ic) rating of 1A, making it suitable for low to medium power applications. With a power dissipation (Pd) of 1.35W and a low collector-emitter saturation voltage (VCE(sat)) of 500mV @ 1A, 100mA, the BCP68-25 ensures minimal power loss and efficient operation in compact designs. Its transition frequency (fT) of 100MHz enables reliable high-frequency signal processing.
Features:
lLow voltage (max.20 V).
lHigh current(max.1 A).
Applications:
lGeneral purpose switching and amplification under high current conditions.
| File Name | Title | Description |
|---|---|---|
| BCP68-25_SOT-223.PDF | BCP68-25_SOT-223 | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
The BCP55-16 is a high-performance NPN bipolar junction transistor known for its robust design and efficient operation in various electronic circuits. It features a maximum collector-emitter voltage (Vceo) of 60V and a collector current (Ic) rating of 1A, making it suitable for applications that require moderate voltage and current handling capabilities. With a power dissipation (Pd) of 1.5W and a low collector-emitter saturation voltage (VCE(sat)) of 500mV @ 500mA, 50mA, the BCP55-16 ensures reliable switching and amplification in compact designs.
The BCP56-16 is a high-performance NPN Bipolar Junction Transistor (BJT) designed for applications requiring robust switching and amplification capabilities. It features a high collector-emitter voltage rating (Vceo) of 80V and a maximum collector current (Ic) of 1A. Packaged in a compact SOT-223 surface-mount package, this transistor offers excellent power dissipation and thermal performance for demanding circuit designs.
The CZT5551 is a NPN bipolar (BJT) transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.
Vceo:12V Ic:100mA Pd:1000mW VCE:- fT:10GHz Working temperature:150℃@(Tj)
Vceo:6V Ic:80mA Pd:380mW VCE:- fT:11GHz Working temperature:150℃@(Tj)
Vceo:12V Ic:100mA Pd:150mW VCE:- fT:8GHz Working temperature:150℃@(Tj)
Vceo:4.5V Ic:100nA Pd:135mW VCE:- fT:25GHz Working temperature:150℃@(Tj)
Vceo:15V Ic:300mA Pd:2000mW VCE(sat):- fT:8.5GHz Working temperature:-40℃~150℃@(Tj)
