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type: N+P-Channel
Vdss: 40V
Id: 1μA
RDS(on): N-30mΩ/P-16mΩ
Vgs(th)@Id: 2V@250μA
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
General Description
This N+P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gatecharge. It can be used in a wide variety of applications.
Features
● N-Channel
40V/7.5A,
RDS(ON) = 21mW (max.) @ VGS = 10V
RDS(ON) = 25mW (max.) @ VGS = 4.5V
● P-Channel
-40V/-5.5A,
RDS(ON) = 38mW (max.) @ VGS =-10V
RDS(ON) = 62mW (max.) @ VGS =-4.5V
● 100% UIS + Rg Tested
● Reliableand Rugged
● Lead FreeAvailable(RoHS Compliant)
Applications
● Synchronous Rectification
● Motor Control
● Fan Pre-driver H-bridge
| File Name | Title | Description |
|---|---|---|
| SL4614 SOP-8.pdf | SL4614 SOP-8 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
● Green device available. ● Advanced high cell denity trench technology for ultra RDS(ON). ● Excellent package for good heat dissipation.
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
100% EAS Guaranteed Green Device Available Super Low Gate Charge
Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology
Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available
Green Device Available Excellent CdV/dt effect decline Advanced high cell densityTrench technology
Green device available. Advanced high cell denity trench technology for uitra low RDS(ON) Excellent package for good heat dissipation.
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
