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This P-Channel MOSFET features ultra-low voltage drive (1.2V) and comes in a small SOT723 package, offering excellent RDS(on) for efficient performance in various applications.
Download datasheet InquiryOur advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
General Description
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gatecharge. It can be used in a wide variety of applications.
Features
● Small Package (SOT723).
● Ultra Low voltage drive (1.2V drive).
● Pb-free lead plating ; RoHS compliant.
● Halogen Free.
Applications
Switching
| File Name | Title | Description |
|---|---|---|
| - | ||
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology
Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available
Green Device Available Excellent CdV/dt effect decline Advanced high cell densityTrench technology
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
● Fast switching ● 100% avalanche tested ● Improved dv/dt capability
● Leading trench technology for low RDS(on) ● Low Gate Charge
● Leading trench technology for low RDS(on) ● Low Gate Charge
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
