Fast Recovery Diode

The internal structure of fast recovery diode is different from ordinary PN junction diode, which belongs to PIN junction diode, i.e., the base region I is added in the middle of the P-type silicon material and N-type silicon material to form the PIN silicon wafer. Because the base region is very thin, the reverse recovery charge is very small, so the reverse recovery time of the fast recovery diode is shorter, the forward voltage drop is lower, and the reverse breakdown voltage (withstand voltage value) is higher.

Product Comparison Clear filters
1000V 1A 1.3V 5μA 500ns SMA
1000V 1A 1.7V 5μA 75ns SMA
1000V 1A 1.3V 5μA 500ns SMA
1000V 1A 1.7V 5μA 75ns SMA
200V 1A 1V 5μA 35ns SMAF
400V 1A 1.25V 5μA 35ns SMAF
600V 1A 1.68V 5μA 35ns SMAF
200V 2A 1V 5μA 35ns SMAF
400V 1A 1.25V 5μA 35ns SMAF
600V 1A 1.68V 5μA 35ns SMAF
600V 2A 1.7V 5μA 35ns SOD-123FL
1000V 2A 1.7V 5μA 75ns SMA
200V 3A 1.25V 5μA 35ns SMC
1000V 1A 1.3V 5μA 500ns SOD-123FL
1000V 1A 1.3V 5μA 500ns SOD-323
200V 1A 1.3V 5μA 150ns SMAF
400V 1A 1.3V 5μA 150ns SMAF
600V 1A 1.3V 5μA 250ns SMAF
1000V 1A 1.3V 5μA 500ns SMA
1000V 1A 1.3V 5μA 500ns SMAF
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Fast Recovery Diode

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