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This diode features a robust VRRM of 1000V, ensuring it can handle high-voltage environments with ease. Designed with a low forward voltage drop of 1.7V and an ultra-low reverse leakage current of just 5μA, it provides exceptional performance while minimizing power loss and heat generation.
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DESCRIPTION
This diode features a robust VRRM of 1000V, ensuring it can handle high-voltage environments with ease. Designed with a low forward voltage drop of 1.7V and an ultra-low reverse leakage current of just 5μA, it provides exceptional performance while minimizing power loss and heat generation.
FEATURES
● The plastic package carries Underwriters Laboratory
● Flammability Classification 94V-0
● For surface mounted applications
● Super fast switching for high efficiency
● Low reverse leakage
● Built-in strain relief,ideal for automated placement
● High forward surge current capability
● High temperature soldering guaranteed: 260C/10 seconds at terminals
APPLICATIONS
● Power Adapters and Chargers: Ensures reliable operation and efficiency in power conversion and regulation.
● High-Voltage Rectification: Handles high reverse voltages with minimal leakage for stable performance.
● Switching Power Supplies: Provides fast recovery and low forward voltage drop for improved efficiency in switching applications.
● Motor Drives: Enhances reliability and performance in circuits driving motors and other inductive loads.
| File Name | Title | Description |
|---|---|---|
| ES2M SMA.pdf | ES2M SMA | - |
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This diode features a peak reverse voltage rating (VRRM) of 200V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 400V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.3V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 600V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.65V. Its fast reverse recovery time (trr) of just 75ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 1000V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.65V. Its fast reverse recovery time (trr) of just 75ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 200V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 400V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.3V. Its fast reverse recovery time (trr) of just 50ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 600V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.65V. Its fast reverse recovery time (trr) of just 75ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 1000V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.65V. Its fast reverse recovery time (trr) of just 75ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
