Fast Recovery Diode

The internal structure of fast recovery diode is different from ordinary PN junction diode, which belongs to PIN junction diode, i.e., the base region I is added in the middle of the P-type silicon material and N-type silicon material to form the PIN silicon wafer. Because the base region is very thin, the reverse recovery charge is very small, so the reverse recovery time of the fast recovery diode is shorter, the forward voltage drop is lower, and the reverse breakdown voltage (withstand voltage value) is higher.

Description Title Download
- ES2G ES2G.pdf
- ES3DC SMC ES3DC SMC.pdf
- RS3MB SMB RS3MB SMB.pdf
- US2MF SMAF US2MF SMAF.pdf
- US2MF SMAF US2MF SMAF.pdf
- US2MF SMAF US2MF SMAF.pdf
- US2MF SMAF US2MF SMAF.pdf
- US1MF SMAF US1MF SMAF.pdf
- US1MF SMAF US1MF SMAF.pdf
- US1MF SMAF US1MF SMAF.pdf
- US1MF SMAF US1MF SMAF.pdf
- ES2JF SMAF ES2JF SMAF.pdf
- ES2JF SMAF ES2JF SMAF.pdf
- ES1JF SMAF ES1JF SMAF.pdf
- ES1JF SMAF ES1JF SMAF.pdf
- ES1JF SMAF ES1JF SMAF.pdf
- RS1MF SMAF RS1MF SMAF.pdf
- RS2MF SMAF RS2MF SMAF.pdf
- RS2MF SMAF RS2MF SMAF.pdf
- RS1MF SMAF RS1MF SMAF.pdf
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Fast Recovery Diode

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