Fast Recovery Diode

The internal structure of fast recovery diode is different from ordinary PN junction diode, which belongs to PIN junction diode, i.e., the base region I is added in the middle of the P-type silicon material and N-type silicon material to form the PIN silicon wafer. Because the base region is very thin, the reverse recovery charge is very small, so the reverse recovery time of the fast recovery diode is shorter, the forward voltage drop is lower, and the reverse breakdown voltage (withstand voltage value) is higher.

Description Title Download
- RS1MF SMAF RS1MF SMAF.pdf
- RS1MF SMAF RS1MF SMAF.pdf
- US2J US2J.pdf
- US2J US2J.pdf
- US2J US2J.pdf
- ES2M SMA ES2M SMA.pdf
- MURF1040FCT TO-220F MURF1040FCT TO-220F.pdf
- FR107WS SOD-323 FR107WS SOD-323.pdf
- RS3MBF SMBF RS3MBF SMBF.pdf
- US1MW SOD-123FL US1MW SOD-123FL.pdf
- US1MW SOD-123FL US1MW SOD-123FL.pdf
- US1MW SOD-123FL US1MW SOD-123FL.pdf
- ES2JW SOD-123FL ES2JW SOD-123FL.pdf
- US5MC SMC US5MC SMC.pdf
- US5MB SMB US5MB SMB.pdf
- RS5MC SMC RS5MC SMC.pdf
- US1DW SOD-123FL US1DW SOD-123FL.pdf
- RS5MB RS5MB.PDF
- RS2D RS2D.PDF
- RS2D RS2D.PDF
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Fast Recovery Diode

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