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This diode features a peak reverse voltage rating (VRRM) of 200V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.25V. Its fast reverse recovery time (trr) of just 500ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
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Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
DESCRIPTION
This diode features a peak reverse voltage rating (VRRM) of 200V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.25V. Its fast reverse recovery time (trr) of just 500ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
FEATURES
● For surface mounted applications
● Low profile package
● Glass Passivated Chip Junction
● Easy to pick and place
● High efficiency
● Lead free in comply with EU RoHS 2011/65/EU directives
APPLICATIONS
● Power Supply Systems: Ideal for use in high-voltage power supplies and rectifier circuits.
● Switching Circuits: Suitable for high-speed switching applications where fast recovery is crucial.
● Signal Protection: Effective in protecting sensitive electronic components from reverse voltage spikes.
● Communication Equipment: Perfect for use in RF and communication systems that require quick response and reliable performance.
| File Name | Title | Description |
|---|---|---|
| ES3DC SMC.pdf | ES3DC SMC | - |
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This diode features a peak reverse voltage rating (VRRM) of 400V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.25V. Its fast reverse recovery time (trr) of just 35ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
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The SF1004DS Fast Recovery Rectifier Diode TO-252 is engineered for reliability and efficiency in a variety of electronic applications. This diode features a Reverse Repetitive Voltage (VRRM) of 400V and a forward current (IO) rating of 10A, making it ideal for use in demanding environments where both high voltage and current handling are crucial. Its low forward voltage drop (VF) of 0.95V ensures minimal power loss, while its ultra-low reverse leakage current (IR) of 1μA guarantees optimal performance.
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