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The ES3JBF Fast Recovery Rectifier Diode SMBF is a high-performance component designed for demanding applications. With a maximum reverse repetitive voltage (VRRM) of 600V, it ensures robust operation under high-voltage conditions. This diode supports a continuous forward current (IO) of 3A, making it suitable for high-current circuits. The forward voltage (VF) of 1.7V minimizes power loss and enhances efficiency. It boasts an ultra-low reverse leakage current (IR) of just 5μA, ensuring stable performance even in low-voltage scenarios. Its fast reverse recovery time (trr) of 35ns enhances switching performance, ideal for high-speed applications. Packaged in the compact SMBF form factor, this diode is perfect for use in power supplies, voltage regulation, and protection circuits.
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Surface Mount Superfast Recovery Rectifier
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Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
Description
The ES3JBF Fast Recovery Rectifier Diode SMBF is a high-performance component designed for demanding applications. With a maximum reverse repetitive voltage (VRRM) of 600V, it ensures robust operation under high-voltage conditions. This diode supports a continuous forward current (IO) of 3A, making it suitable for high-current circuits. The forward voltage (VF) of 1.7V minimizes power loss and enhances efficiency. It boasts an ultra-low reverse leakage current (IR) of just 5μA, ensuring stable performance even in low-voltage scenarios. Its fast reverse recovery time (trr) of 35ns enhances switching performance, ideal for high-speed applications. Packaged in the compact SMBF form factor, this diode is perfect for use in power supplies, voltage regulation, and protection circuits.
Features
● For surface mounted applications
● Low profile package
● Glass Passivated Chip Junction
● Superfast reverse recovery time
● Lead free in comply with EU RoHS 2011/65/EU diretives
Applications
Ideal for use in power supply circuits, over-voltage protection, and switching regulators, the SMBF Diode excels in environments requiring high voltage and current handling with minimal energy loss and rapid recovery times.
| File Name | Title | Description |
|---|---|---|
| ES3JBF SMBF.pdf | ES3JBF SMBF | - |
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The ES5JBF Fast Recovery Rectifier Diode SMBF is designed to deliver reliable performance and efficiency in a compact package. With a maximum reverse voltage rating (VRRM) of 50V and a forward current rating (IO) of 5A, this diode is engineered to meet the demanding needs of modern electronic circuits. Its low forward voltage drop (VF) of just 1V ensures minimal power loss, while its fast recovery time (trr) of 35ns enhances switching speed for high-frequency applications.
This diode features a maximum reverse voltage rating of 50V, ensuring reliable performance in a variety of applications. With a low forward voltage drop of 1.3V and a minimal reverse leakage current of just 5μA, it provides optimal efficiency and reduced power loss. The diode is housed in a compact SMBF package, offering versatility and ease of integration into various designs.
The SF1006DS Fast Recovery Rectifier Diode TO-252 is engineered for reliability and efficiency in a variety of electronic applications. This diode features a Reverse Repetitive Voltage (VRRM) of 400V and a forward current (IO) rating of 10A, making it ideal for use in demanding environments where both high voltage and current handling are crucial. Its low forward voltage drop (VF) of 0.95V ensures minimal power loss, while its ultra-low reverse leakage current (IR) of 1μA guarantees optimal performance.
The SF1004DS Fast Recovery Rectifier Diode TO-252 is engineered for reliability and efficiency in a variety of electronic applications. This diode features a Reverse Repetitive Voltage (VRRM) of 400V and a forward current (IO) rating of 10A, making it ideal for use in demanding environments where both high voltage and current handling are crucial. Its low forward voltage drop (VF) of 0.95V ensures minimal power loss, while its ultra-low reverse leakage current (IR) of 1μA guarantees optimal performance.
The SF1002DS Fast Recovery Rectifier Diode TO-252 is engineered for reliability and efficiency in a variety of electronic applications. This diode features a Reverse Repetitive Voltage (VRRM) of 200V and a forward current (IO) rating of 10A, making it ideal for use in demanding environments where both high voltage and current handling are crucial. Its low forward voltage drop (VF) of 0.95V ensures minimal power loss, while its ultra-low reverse leakage current (IR) of 1μA guarantees optimal performance.
This diode features a peak reverse voltage rating (VRRM) of 400V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.25V. Its fast reverse recovery time (trr) of just 35ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 200V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.25V. Its fast reverse recovery time (trr) of just 500ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
This diode features a peak reverse voltage rating (VRRM) of 1000V and is engineered to provide consistent performance with a forward voltage drop (VF) of 1.3V. Its fast reverse recovery time (trr) of just 500ns ensures efficient switching, making it ideal for high-speed applications. The diode boasts a low reverse leakage current (IR) of 5μA, enhancing its reliability and efficiency in various circuits.
