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Fast Switching
Low ON Resistance
Low Gate Charge
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
General Description
The SL8N65F is a high-voltage N-Channel Enhancement MOSFET designed for demanding power applications. Housed in a robust TO-220F package, this MOSFET delivers exceptional performance with its high voltage rating, low on-resistance, and substantial current handling capabilities. It is well-suited for use in power supplies, switching regulators, and other high-power electronic circuits.
Features
● Fast Switching
● Low ON Resistance
● Low Gate Charge
● 100% Single Pulse avalanche energy Test
Applications
● Power switch circuit of adaptor and charger.
| File Name | Title | Description |
|---|---|---|
| SL8N65F TO-220F.pdf | SL8N65F TO-220F | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
This N-Channel MOSFET features ultra-low voltage drive (1.2V), comes in a small SOT723 package, and is Pb-free and RoHS compliant for efficient, reliable performance.
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Advanced Trench Technology ● Provide Excellent RDS(ON) and Low Gate Charge ● Lead free product is acquired
● Low voltage drive makes this device ideal for portable equipment ● Easily designed drive circuits ● Easy to parallel
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
Type : P-Channel Vdss: 50V Id: 130mA Pd: 200mW RDS(on)@Vgs,Id: 10Ω@5V,100mA Vgs(th)@Id: 2.5V@250uA Ciss@Vds : 73pF@25V Working Temperature: +150℃@(Tj)
Fast Switching Low ON Resistance Low Gate Charge
High voltage, low on-resistance High-speed, low parasitic capacitance High operating junction temperature
