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● Low voltage drive makes this device ideal for portable equipment
● Easily designed drive circuits
● Easy to parallel
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
General Description
The 2SK3019 is a compact N-Channel Enhancement MOSFET designed for low-power switching and control applications. Encased in a small SOT-523 package, this MOSFET offers reliable performance in space-constrained designs, making it ideal for portable and consumer electronics where efficient switching is crucial.
Features
● Low on-resistance
● Fast switching speed
● Low voltage drive makes this device ideal for portable equipment
● Easily designed drive circuits
● Easy to parallel
Applications
● Low-Power Switching: Ideal for low-power switching tasks in compact electronic devices and consumer products.
● Signal Processing: Suitable for signal processing applications requiring precise control and efficient operation.
● Portable Electronics: Perfect for portable electronics where size and power efficiency are critical.
| File Name | Title | Description |
|---|---|---|
| 2SK3019 SOT-523.pdf | 2SK3019 SOT-523 | - |
| Proposition-65-Compliance-Report_1.pdf | Proposition 65 Compliance Report_1 | - |
| Proposition-65-Compliance-Report_2.pdf | Proposition 65 Compliance Report_2 | - |
| REACH.pdf | REACH | - |
| RoHS-1.pdf | RoHS | - |
Support
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
Fast Switching Low ON Resistance Low Gate Charge
This N-Channel MOSFET features ultra-low voltage drive (1.2V), comes in a small SOT723 package, and is Pb-free and RoHS compliant for efficient, reliable performance.
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
● Advanced Trench Technology ● Provide Excellent RDS(ON) and Low Gate Charge ● Lead free product is acquired
● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching
Type : P-Channel Vdss: 50V Id: 130mA Pd: 200mW RDS(on)@Vgs,Id: 10Ω@5V,100mA Vgs(th)@Id: 2.5V@250uA Ciss@Vds : 73pF@25V Working Temperature: +150℃@(Tj)
High voltage, low on-resistance High-speed, low parasitic capacitance High operating junction temperature
● Low on-resistance ● Fast switching speed ● Low voltage drive makes this device ideal for portable equipment
